A Study on the Process and Device Characteristics of BICMOS Gate Array
Vol. 14, No. 3, pp. 189-196, Jun. 1989
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Cite this article
[IEEE Style]
박치선, "A Study on the Process and Device Characteristics of BICMOS Gate Array," The Journal of Korean Institute of Communications and Information Sciences, vol. 14, no. 3, pp. 189-196, 1989. DOI: .
[ACM Style]
박치선. 1989. A Study on the Process and Device Characteristics of BICMOS Gate Array. The Journal of Korean Institute of Communications and Information Sciences, 14, 3, (1989), 189-196. DOI: .
[KICS Style]
박치선, "A Study on the Process and Device Characteristics of BICMOS Gate Array," The Journal of Korean Institute of Communications and Information Sciences, vol. 14, no. 3, pp. 189-196, 3. 1989.
pISSN : 1226 - 4717
eISSN : 2287 - 3880