A New Parameter Extraction Technique for high Performance HEMT s using S-parameters Under Nonconducting Gate Bias Condition
Vol. 23, No. 2, pp. 447-455, Feb. 1998
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Cite this article
[IEEE Style]
이대희, 권영우, 구경헌, "A New Parameter Extraction Technique for high Performance HEMT s using S-parameters Under Nonconducting Gate Bias Condition," The Journal of Korean Institute of Communications and Information Sciences, vol. 23, no. 2, pp. 447-455, 1998. DOI: .
[ACM Style]
이대희, 권영우, and 구경헌. 1998. A New Parameter Extraction Technique for high Performance HEMT s using S-parameters Under Nonconducting Gate Bias Condition. The Journal of Korean Institute of Communications and Information Sciences, 23, 2, (1998), 447-455. DOI: .
[KICS Style]
이대희, 권영우, 구경헌, "A New Parameter Extraction Technique for high Performance HEMT s using S-parameters Under Nonconducting Gate Bias Condition," The Journal of Korean Institute of Communications and Information Sciences, vol. 23, no. 2, pp. 447-455, 2. 1998.
pISSN : 1226 - 4717
eISSN : 2287 - 3880