A Study on the Device Degradation with 0.1㎛ level PMOSFET
Vol. 23, No. 11, pp. 175-179, Nov. 1998
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Cite this article
[IEEE Style]
홍성희 and 이용수, "A Study on the Device Degradation with 0.1㎛ level PMOSFET," The Journal of Korean Institute of Communications and Information Sciences, vol. 23, no. 11, pp. 175-179, 1998. DOI: .
[ACM Style]
홍성희 and 이용수. 1998. A Study on the Device Degradation with 0.1㎛ level PMOSFET. The Journal of Korean Institute of Communications and Information Sciences, 23, 11, (1998), 175-179. DOI: .
[KICS Style]
홍성희 and 이용수, "A Study on the Device Degradation with 0.1㎛ level PMOSFET," The Journal of Korean Institute of Communications and Information Sciences, vol. 23, no. 11, pp. 175-179, 11. 1998.
pISSN : 1226 - 4717
eISSN : 2287 - 3880