Analysis of the Inversion Layer Depth in Moderate Inversion of the MOS FET
Vol. 25, No. 6, pp. 137-144, Jun. 2000
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Cite this article
[IEEE Style]
노영준 and 김철성, "Analysis of the Inversion Layer Depth in Moderate Inversion of the MOS FET," The Journal of Korean Institute of Communications and Information Sciences, vol. 25, no. 6, pp. 137-144, 2000. DOI: .
[ACM Style]
노영준 and 김철성. 2000. Analysis of the Inversion Layer Depth in Moderate Inversion of the MOS FET. The Journal of Korean Institute of Communications and Information Sciences, 25, 6, (2000), 137-144. DOI: .
[KICS Style]
노영준 and 김철성, "Analysis of the Inversion Layer Depth in Moderate Inversion of the MOS FET," The Journal of Korean Institute of Communications and Information Sciences, vol. 25, no. 6, pp. 137-144, 6. 2000.
pISSN : 1226 - 4717
eISSN : 2287 - 3880