The Impact of Stress Induced Leakage Current on the Refresh Time in DRAM
Vol. 25, No. 12, pp. 254-257, Dec. 2000
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Cite this article
[IEEE Style]
홍성희, 이재기, 김창복, "The Impact of Stress Induced Leakage Current on the Refresh Time in DRAM," The Journal of Korean Institute of Communications and Information Sciences, vol. 25, no. 12, pp. 254-257, 2000. DOI: .
[ACM Style]
홍성희, 이재기, and 김창복. 2000. The Impact of Stress Induced Leakage Current on the Refresh Time in DRAM. The Journal of Korean Institute of Communications and Information Sciences, 25, 12, (2000), 254-257. DOI: .
[KICS Style]
홍성희, 이재기, 김창복, "The Impact of Stress Induced Leakage Current on the Refresh Time in DRAM," The Journal of Korean Institute of Communications and Information Sciences, vol. 25, no. 12, pp. 254-257, 12. 2000.
pISSN : 1226 - 4717
eISSN : 2287 - 3880