The I-V Modelling in the Strong Inversion of MOSFET using the Multiple Box Segmentation Method
Vol. 26, No. 5, pp. 677-684, May 2001
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Cite this article
[IEEE Style]
노영준 and 김철성, "The I-V Modelling in the Strong Inversion of MOSFET using the Multiple Box Segmentation Method," The Journal of Korean Institute of Communications and Information Sciences, vol. 26, no. 5, pp. 677-684, 2001. DOI: .
[ACM Style]
노영준 and 김철성. 2001. The I-V Modelling in the Strong Inversion of MOSFET using the Multiple Box Segmentation Method. The Journal of Korean Institute of Communications and Information Sciences, 26, 5, (2001), 677-684. DOI: .
[KICS Style]
노영준 and 김철성, "The I-V Modelling in the Strong Inversion of MOSFET using the Multiple Box Segmentation Method," The Journal of Korean Institute of Communications and Information Sciences, vol. 26, no. 5, pp. 677-684, 5. 2001.
pISSN : 1226 - 4717
eISSN : 2287 - 3880