Design of MMIC SPDT Switches in the ISM Band Using GaAs MESFETs 


Vol. 28,  No. 3, pp. 179-184, Mar.  2003


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  Abstract

In this paper, an asymmetric topology of MMIC SPDT switch was proposed to increase the isolation in the receiving path and decrease the insertion loss with higher P1dB in the transmitting path for the ISM band. This SPDT switch was implemented with 0.5㎛ GaAs MESFETs processed by ETRI for the IDEC MPW project. For the receiving path the measured insertion losses were 1.518dB at 3GHz and 1.777dB at 5.75GHz and the isolations were 38.474dB at 3GHz and 29.125dB at 5.75GHz. For the transmitting path the insertion losses were 0.916dB at 3GHz and 1.162dB at 5.75GHz and the isolations were 23.259dB at 3GHz and 16.632dB at 5.75GHz. Compared to the symmetric topology the isolations of the receiving path for the asymmetric one were improved by 15.9dB at 3GHz and 11.9dB at 5.75GHz and its insertion loss was increased by about 0.6dB. In addition, P1dB of 21.5 dBm for the transmitting path was obtained, which is increased by 3.86dB compared to the symmetric one.

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  Cite this article

[IEEE Style]

H. Park, K. Yoon, H. Ji, H. Kim, "Design of MMIC SPDT Switches in the ISM Band Using GaAs MESFETs," The Journal of Korean Institute of Communications and Information Sciences, vol. 28, no. 3, pp. 179-184, 2003. DOI: .

[ACM Style]

Hun Park, Kyung-Sik Yoon, Hong-Koo Ji, and Hae-Cheon Kim. 2003. Design of MMIC SPDT Switches in the ISM Band Using GaAs MESFETs. The Journal of Korean Institute of Communications and Information Sciences, 28, 3, (2003), 179-184. DOI: .

[KICS Style]

Hun Park, Kyung-Sik Yoon, Hong-Koo Ji, Hae-Cheon Kim, "Design of MMIC SPDT Switches in the ISM Band Using GaAs MESFETs," The Journal of Korean Institute of Communications and Information Sciences, vol. 28, no. 3, pp. 179-184, 3. 2003.

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pISSN : 1226 - 4717
eISSN : 2287 - 3880