Design and Fablication of a HBT Power Amplifier for Quasi Millimeter-wave Broadband Wireless Local Loop Applications 


Vol. 27,  No. 3, pp. 234-240, Mar.  2002


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  Abstract

A power amplifier with AlGaAs/InGaAs/GaAs HBT's has been developed for customer premise equipments of the quasi millimeter-wave frequency-band broadband wireless local loop(BWLL) system. Parameters of the linear and nonlinear equivalent circuits for a common base HBT have been extracted by a fitting method. The amplifier has been designed through the linear and nonlinear circuit simulations and fabricated on a ceramic substrate for a hybrid IC. The amplifier has produced a 25.5-dBm output power with 35% power-added efficiency(PAE) at 24.4 GHz and achieved a 7.5-dB linear power gain at 24.8 GHz. In 24.25~24.75 GHz band, the amplifier has exhibited a saturated outputp ower larger than 22 dBm and PAE higher than 25%.

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  Cite this article

[IEEE Style]

C. Kim and K. Chae, "Design and Fablication of a HBT Power Amplifier for Quasi Millimeter-wave Broadband Wireless Local Loop Applications," The Journal of Korean Institute of Communications and Information Sciences, vol. 27, no. 3, pp. 234-240, 2002. DOI: .

[ACM Style]

Chang-Woo Kim and Kyu-Sung Chae. 2002. Design and Fablication of a HBT Power Amplifier for Quasi Millimeter-wave Broadband Wireless Local Loop Applications. The Journal of Korean Institute of Communications and Information Sciences, 27, 3, (2002), 234-240. DOI: .

[KICS Style]

Chang-Woo Kim and Kyu-Sung Chae, "Design and Fablication of a HBT Power Amplifier for Quasi Millimeter-wave Broadband Wireless Local Loop Applications," The Journal of Korean Institute of Communications and Information Sciences, vol. 27, no. 3, pp. 234-240, 3. 2002.

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pISSN : 1226 - 4717
eISSN : 2287 - 3880