AlGaAs/InGaAs/GaAs power PHEMT with a 0.2 ㎛ gate length for MIMIC power amplifier. 


Vol. 27,  No. 4, pp. 365-371, Apr.  2002


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  Abstract

In this paper, the fabricated power PHEMT devices for millimeter-wave that is below a gate-length of 0.2?m using electronic beam lithography technologies, and the DC and frequency characteristics and an output power characteristics were measured at the various bias conditions. The unit process that is used in PHEMT's manufacture used that low-resistance ohmic contact, air-bridge and back-side lapping process technologies, and so on. The fabricated power PHEMT have an S21 gain of 4 dB and a maximum transconductance(gm) of 317 mS/mm, an unilateral current gain(fT) of 62 GHz, a maximum oscillation frequency(fmax)of 120 GHz at 35 GHz, and a maximum power output(Pmax) of 16 dBm, a power gain^1)(GP) of 4 dB and a drain efficiency(DE) of 35.5 %.

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  Cite this article

[IEEE Style]

E. Rhee, "AlGaAs/InGaAs/GaAs power PHEMT with a 0.2 ㎛ gate length for MIMIC power amplifier.," The Journal of Korean Institute of Communications and Information Sciences, vol. 27, no. 4, pp. 365-371, 2002. DOI: .

[ACM Style]

Eung-ho Rhee. 2002. AlGaAs/InGaAs/GaAs power PHEMT with a 0.2 ㎛ gate length for MIMIC power amplifier.. The Journal of Korean Institute of Communications and Information Sciences, 27, 4, (2002), 365-371. DOI: .

[KICS Style]

Eung-ho Rhee, "AlGaAs/InGaAs/GaAs power PHEMT with a 0.2 ㎛ gate length for MIMIC power amplifier.," The Journal of Korean Institute of Communications and Information Sciences, vol. 27, no. 4, pp. 365-371, 4. 2002.

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pISSN : 1226 - 4717
eISSN : 2287 - 3880