Design of MMIC SPST Switches Using GaAs MESFETs 


Vol. 27,  No. 4, pp. 371-379, Apr.  2002


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  Abstract

In this paper, the MMIC SPST switches operating from DC to 3GHz were designed and implemented. Prior to the design of switches, the small and large-signal switch models were needed to predict switch performance accurately. The newly proposed small-signal switch model parameters were extracted from measured S-parameters using optimization technique with estimated initial values and boundary limits. In the extraction of large-signal switch model parameters, the current source was modeled by fitting empirical equations to measured DC data and the charge model was derived from extracted channel capacitances from measured S-parameters varying the drain-source voltage. To design basic series-shunt SPST switches and isolation-improved SPST switches, we applied this model to commercial microwave circuit simulator. The improved SPST switches exhibited 0.302dB insertion loss, 35.762dB isolation, 1.249 input VSWR, 1.254 output VSWR, and about 15.7dBm PldB with 0/-3V control voltages at 3GHz.

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  Cite this article

[IEEE Style]

M. Rhee, K. Yoon, C. Hyoung, H. Kim, C. Park, "Design of MMIC SPST Switches Using GaAs MESFETs," The Journal of Korean Institute of Communications and Information Sciences, vol. 27, no. 4, pp. 371-379, 2002. DOI: .

[ACM Style]

Myoung-Kyu Rhee, Kyung-Sik Yoon, Chang-Hee Hyoung, Hae-Cheon Kim, and Chul-Soon Park. 2002. Design of MMIC SPST Switches Using GaAs MESFETs. The Journal of Korean Institute of Communications and Information Sciences, 27, 4, (2002), 371-379. DOI: .

[KICS Style]

Myoung-Kyu Rhee, Kyung-Sik Yoon, Chang-Hee Hyoung, Hae-Cheon Kim, Chul-Soon Park, "Design of MMIC SPST Switches Using GaAs MESFETs," The Journal of Korean Institute of Communications and Information Sciences, vol. 27, no. 4, pp. 371-379, 4. 2002.

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pISSN : 1226 - 4717
eISSN : 2287 - 3880