Study on Impact of Temperate on SOI DTMOS and PD-SOI MOSFET 


Vol. 32,  No. 12, pp. 413-418, Dec.  2007


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  Abstract

This paper reports that the characteristics of SOI Dynamic-Threshold MOS(DTMOS) transistors are experimentally investigated at various temperatures and compared with those of partially depleted(PD) SOI MOSFET. A possible physical mechanism explaining the enhanced drive current and transconductance of DTMOS devices is suggested from the measured results. The temperature dependence of threshold voltage, short channel effects, and subthreshold characteristics are investigated experimentally. From the comparison with partially depleted SOI MOSFET, it is observed that DTMOS devices operating at elevated temperature have higher drive current and transconductance, less short channel effect, and better subthreshold characteristics than partially depleted SOI MOSFETs.

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  Cite this article

[IEEE Style]

J. Lee and S. Hong, "Study on Impact of Temperate on SOI DTMOS and PD-SOI MOSFET," The Journal of Korean Institute of Communications and Information Sciences, vol. 32, no. 12, pp. 413-418, 2007. DOI: .

[ACM Style]

Jae-Ki Lee and Sung-Hee Hong. 2007. Study on Impact of Temperate on SOI DTMOS and PD-SOI MOSFET. The Journal of Korean Institute of Communications and Information Sciences, 32, 12, (2007), 413-418. DOI: .

[KICS Style]

Jae-Ki Lee and Sung-Hee Hong, "Study on Impact of Temperate on SOI DTMOS and PD-SOI MOSFET," The Journal of Korean Institute of Communications and Information Sciences, vol. 32, no. 12, pp. 413-418, 12. 2007.

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pISSN : 1226 - 4717
eISSN : 2287 - 3880