A Study on a Linearity Improvement in X-band SiGe HBT Double-Balanced Frequency Up-converters Using an Emitter Degeneration 


Vol. 33,  No. 1, pp. 85-90, Jan.  2008


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  Abstract

Effects of the emitter degeneration on linearity have been investigated in SiGe HBT double-balanced up-converters with the Gilbert-cell structure. The emitter-coupled degeneration resistors have been optimized for high P1-㏈ and IP3 through the nonlinear harmonic-balance simulation. Two types of up-converter MMICs fabricated in 0.35 ㎛ Si-BiCMOS process were measured to verify the simulation results. The up-converter without the degeneration resistors produces a P1-㏈ of -13 ㏈m with an OIP3 of 3.7 ㏈m, while the up-converter with the degeneration resistors produces a P1-㏈ of -10 ㏈m with an OIP3 of 8.7 ㏈m.

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  Cite this article

[IEEE Style]

K. Chae and C. Kim, "A Study on a Linearity Improvement in X-band SiGe HBT Double-Balanced Frequency Up-converters Using an Emitter Degeneration," The Journal of Korean Institute of Communications and Information Sciences, vol. 33, no. 1, pp. 85-90, 2008. DOI: .

[ACM Style]

Kyu-Sung Chae and Chang-Woo Kim. 2008. A Study on a Linearity Improvement in X-band SiGe HBT Double-Balanced Frequency Up-converters Using an Emitter Degeneration. The Journal of Korean Institute of Communications and Information Sciences, 33, 1, (2008), 85-90. DOI: .

[KICS Style]

Kyu-Sung Chae and Chang-Woo Kim, "A Study on a Linearity Improvement in X-band SiGe HBT Double-Balanced Frequency Up-converters Using an Emitter Degeneration," The Journal of Korean Institute of Communications and Information Sciences, vol. 33, no. 1, pp. 85-90, 1. 2008.