Study on Temperature Dependence of Hot Carrier Degradation in SOI DTMOS Transistors 


Vol. 33,  No. 6, pp. 201-206, Jun.  2008


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  Abstract

In this thesis, we reports the experimental results on the temperature dependence of hot carrier degradation of DTMOS devices. Both low and high stress gate voltages are used. The degradation of devices stressed at high temperature with a low gate voltage can be larger than that in devices stressed at a higher gate voltage but at a lower temperature. The temperature dependence of the hot carrier effects in DTMOS devices is compared with those in SOI PD MOSFETs. The possible mechanism explaining the less device degradation of the DTMOS, when compared to a PD MOSFET is the reduction of maximum lateral electric field resulting from the reduction of threshold voltage due to the connection between the gate and the body.

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  Cite this article

[IEEE Style]

J. Lee, S. Jang, S. Hong, "Study on Temperature Dependence of Hot Carrier Degradation in SOI DTMOS Transistors," The Journal of Korean Institute of Communications and Information Sciences, vol. 33, no. 6, pp. 201-206, 2008. DOI: .

[ACM Style]

Jae-Ki Lee, Sung-Jun Jang, and Sung-Hee Hong. 2008. Study on Temperature Dependence of Hot Carrier Degradation in SOI DTMOS Transistors. The Journal of Korean Institute of Communications and Information Sciences, 33, 6, (2008), 201-206. DOI: .

[KICS Style]

Jae-Ki Lee, Sung-Jun Jang, Sung-Hee Hong, "Study on Temperature Dependence of Hot Carrier Degradation in SOI DTMOS Transistors," The Journal of Korean Institute of Communications and Information Sciences, vol. 33, no. 6, pp. 201-206, 6. 2008.

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pISSN : 1226 - 4717
eISSN : 2287 - 3880