Study on the Reliability of nano-scale UTB SOI pMOSFETs with Hot Carier and NBTI 


Vol. 34,  No. 12, pp. 389-394, Dec.  2009


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  Abstract

Negative Bias Temperature Instability of SOI pMOSFET is investigated as a function of Si film orientation and film thickness. It is observed that NBTI induced threshold voltage shift is bigger for (110) MOSFETs in comparison to (100) MOSFETs and it decreases with the decrease of Si film thickness. The dependence of hot carrier effects on the silicon film thickness in nanometer scale SOI pMOSFETs has been investigated. For drain thickened structure, it is observed that the hot carrier effects are increased as a silicon film thickness decreases. Therefore, the hot carrier induced device degradation in nanometer scale MuGFET should be seriously considered for the elevated source/drain structure. The device degradation with substrate bias and elevated temperature has also been discussed.

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  Cite this article

[IEEE Style]

S. Jang, S. Hong, J. Lee, "Study on the Reliability of nano-scale UTB SOI pMOSFETs with Hot Carier and NBTI," The Journal of Korean Institute of Communications and Information Sciences, vol. 34, no. 12, pp. 389-394, 2009. DOI: .

[ACM Style]

Sung-Jun Jang, Sung-Hee Hong, and Jae-Ki Lee. 2009. Study on the Reliability of nano-scale UTB SOI pMOSFETs with Hot Carier and NBTI. The Journal of Korean Institute of Communications and Information Sciences, 34, 12, (2009), 389-394. DOI: .

[KICS Style]

Sung-Jun Jang, Sung-Hee Hong, Jae-Ki Lee, "Study on the Reliability of nano-scale UTB SOI pMOSFETs with Hot Carier and NBTI," The Journal of Korean Institute of Communications and Information Sciences, vol. 34, no. 12, pp. 389-394, 12. 2009.

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pISSN : 1226 - 4717
eISSN : 2287 - 3880