Adaptive Quantization Scheme for Multi-Level Cell NAND Flash Memory 


Vol. 38,  No. 6, pp. 540-549, Jun.  2013


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  Abstract

An adaptive non-uniform quantization scheme is proposed for soft-decision error correction in NAND flash memory. Even though the conventional maximizing mutual information (MMI) quantizer shows the optimal post-FEC (forward error correction) bit error rate (BER) performance, this quantization scheme demands heavy computational overheads due to the exhaustive search to find the optimal parameter values. The proposed quantization scheme has a simple structure that is constructed by only six parameters, and the optimal values of them are found by maximizing the mutual information between the input and the output symbols. It is demonstrated that the proposed quantization scheme improves the BER performance of soft-decision decoding with only small computational overheads.

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  Cite this article

[IEEE Style]

D. Lee and W. Sung, "Adaptive Quantization Scheme for Multi-Level Cell NAND Flash Memory," The Journal of Korean Institute of Communications and Information Sciences, vol. 38, no. 6, pp. 540-549, 2013. DOI: .

[ACM Style]

Dong-hwan Lee and Wonyong Sung. 2013. Adaptive Quantization Scheme for Multi-Level Cell NAND Flash Memory. The Journal of Korean Institute of Communications and Information Sciences, 38, 6, (2013), 540-549. DOI: .

[KICS Style]

Dong-hwan Lee and Wonyong Sung, "Adaptive Quantization Scheme for Multi-Level Cell NAND Flash Memory," The Journal of Korean Institute of Communications and Information Sciences, vol. 38, no. 6, pp. 540-549, 6. 2013.

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pISSN : 1226 - 4717
eISSN : 2287 - 3880