The Vertical Field Analysis within the Strong Inversion of MOS FET using the Multi-box Segmentation Technique
Vol. 25, No. 8, pp. 1469-1476, Aug. 2000
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Cite this article
[IEEE Style]
노영준 and 김철성, "The Vertical Field Analysis within the Strong Inversion of MOS FET using the Multi-box Segmentation Technique," The Journal of Korean Institute of Communications and Information Sciences, vol. 25, no. 8, pp. 1469-1476, 2000. DOI: .
[ACM Style]
노영준 and 김철성. 2000. The Vertical Field Analysis within the Strong Inversion of MOS FET using the Multi-box Segmentation Technique. The Journal of Korean Institute of Communications and Information Sciences, 25, 8, (2000), 1469-1476. DOI: .
[KICS Style]
노영준 and 김철성, "The Vertical Field Analysis within the Strong Inversion of MOS FET using the Multi-box Segmentation Technique," The Journal of Korean Institute of Communications and Information Sciences, vol. 25, no. 8, pp. 1469-1476, 8. 2000.