The Annealing Effect of Diamond-like Carbon Films for RF MEMS Switch 


Vol. 35,  No. 11, pp. 1091-1096, Nov.  2010


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  Abstract

Stiction in microelectromechanical systems (MEMS) has been a major failure mechanism. Especially, in RF MEMS switches, moving parts often suffered in-use and release related stiction problems. Some materials and methods have been used to prevent this problem. Diamond-like carbon (DLC) has not only been used as a protective material owing to its good mechanical properties but also has been used as a hydrophobic material. Its properties could be controlled by post annealing treatment in various conditions. We synthesized DLC films using a radio frequency plasma enhanced chemical vapor deposition (RF PECVD) method on silicon substrates using methane (CH₄) and hydrogen (H₂) gas. Then, the change of the hydrophobic property of the films was investigated undervarious annealing temperatures in nitrogen and in oxygen ambient. The films, that were annealed above 700℃ in nitrogen ambient, showed a high contact angle of water (＞90°) even though their mechanical property was sacrificed to some degree. The structural variation and the changes of the hydrophobic and mechanical properties of the DLC films were analyzed by Raman spectrum, contact angle measurement, surface profiler, and a nanoindentation test.

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  Cite this article

[IEEE Style]

H. S. Hwang, W. S. Choi, J. Cha, "The Annealing Effect of Diamond-like Carbon Films for RF MEMS Switch," The Journal of Korean Institute of Communications and Information Sciences, vol. 35, no. 11, pp. 1091-1096, 2010. DOI: .

[ACM Style]

Hyun Suk Hwang, Won Seok Choi, and Jaesang Cha. 2010. The Annealing Effect of Diamond-like Carbon Films for RF MEMS Switch. The Journal of Korean Institute of Communications and Information Sciences, 35, 11, (2010), 1091-1096. DOI: .

[KICS Style]

Hyun Suk Hwang, Won Seok Choi, Jaesang Cha, "The Annealing Effect of Diamond-like Carbon Films for RF MEMS Switch," The Journal of Korean Institute of Communications and Information Sciences, vol. 35, no. 11, pp. 1091-1096, 11. 2010.

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pISSN : 1226 - 4717
eISSN : 2287 - 3880