Performance of the Coupling Canceller with the Various Window Size on the Multi-Level Cell NAND Flash Memory Channel 


Vol. 37,  No. 8, pp. 706-711, Aug.  2012


PDF
  Abstract

Multi-level cell NAND flash is a flash memory technology using mulitple levels per cell to allow more bits to be stored. Currently, most multi-level cell NAND stores 2 bits of information per cell. This reduces the amount of margin separating the states and results in the possibility of more errors. The most error cause is coupling noise. Thus, in this paper, we studied coupling noise cancellation scheme for reduction memory on the 16-level cell NAND flash memory channel. Also, we compared the performance threshold detection and roposed scheme.

  Statistics
Cumulative Counts from November, 2022
Multiple requests among the same browser session are counted as one view. If you mouse over a chart, the values of data points will be shown.


  Cite this article

[IEEE Style]

D. Park and J. Lee, "Performance of the Coupling Canceller with the Various Window Size on the Multi-Level Cell NAND Flash Memory Channel," The Journal of Korean Institute of Communications and Information Sciences, vol. 37, no. 8, pp. 706-711, 2012. DOI: .

[ACM Style]

Donghyuk Park and Jaejin Lee. 2012. Performance of the Coupling Canceller with the Various Window Size on the Multi-Level Cell NAND Flash Memory Channel. The Journal of Korean Institute of Communications and Information Sciences, 37, 8, (2012), 706-711. DOI: .

[KICS Style]

Donghyuk Park and Jaejin Lee, "Performance of the Coupling Canceller with the Various Window Size on the Multi-Level Cell NAND Flash Memory Channel," The Journal of Korean Institute of Communications and Information Sciences, vol. 37, no. 8, pp. 706-711, 8. 2012.

Search
(IN TITLE, AUTHOR, ABSTRACT,KEYWORDS)

Advanced Search ▼

POPULAR KEYWORDS
(TOP 10 KEYWORDS)

Recent Publications
(LAST 3 YEARS)






pISSN : 1226 - 4717
eISSN : 2287 - 3880