The Degradation Analysis of Characteristic Parameters by NBTI stress in p-MOS Transistor for High Speed 


Vol. 35,  No. 1, pp. 80-86, Jan.  2010


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  Abstract

This work has been measured and analyzed the device degradation of NBTI (Negative Bias Temperature Instability) stress induced the increase of gate-induced-drain-leakage(GIDL) current for p-MOS transistors of gate channel length 0.13 [㎛]. From the relation between the variation of threshold voltage and subthreshold slop by NBTI stress, it has been found that the dominant mechanism for device degradation is the interface state generation. From the GIDL measurement results, we confined that the EHP generation in interface state due to NBTI stress led to the increase of GIDL current. As a results, one should take care of the increased GIDL current after NBTI stress in the ultra-thin gate oxide device. Also, the simultaneous consideration of reliability characteristics and dc device performance is highly necessary in the stress parameters of nanoscale CMOS communication circuit design.

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  Cite this article

[IEEE Style]

Y. Lee, J. Lee, D. Han, "The Degradation Analysis of Characteristic Parameters by NBTI stress in p-MOS Transistor for High Speed," The Journal of Korean Institute of Communications and Information Sciences, vol. 35, no. 1, pp. 80-86, 2010. DOI: .

[ACM Style]

Yongjae Lee, Jonghyung Lee, and Daehyun Han. 2010. The Degradation Analysis of Characteristic Parameters by NBTI stress in p-MOS Transistor for High Speed. The Journal of Korean Institute of Communications and Information Sciences, 35, 1, (2010), 80-86. DOI: .

[KICS Style]

Yongjae Lee, Jonghyung Lee, Daehyun Han, "The Degradation Analysis of Characteristic Parameters by NBTI stress in p-MOS Transistor for High Speed," The Journal of Korean Institute of Communications and Information Sciences, vol. 35, no. 1, pp. 80-86, 1. 2010.

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pISSN : 1226 - 4717
eISSN : 2287 - 3880