Design of MMIC Variable Gain LNA Using Behavioral Model for Wireless LAN Applications 


Vol. 29,  No. 6, pp. 697-704, Jun.  2004


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  Abstract

This paper describes the design and fabrication of an MMIC variable gain LNA for 50Hz wireless LAN applications, using 0.5㎛ gate length GaAs MESFET transistors. The advantages of high gain and low noise performance of E-MESFETs and excellent linear performance of D-MESFETs are combined as a cascode topology in this design. Behavioral model equations are derived from the MESFET nonlinear current voltage characteristics by using Turlington's asymptote method in a cascode configuration. Using the behavioral model equations, a 4x50㎛ E-MESFET as a common source amplifier and a 2x50㎛ D-MESFET as a common gate amplifier are detennined for the cascade amplifier. The fabricated variable gain LNA shows a noise figure of 2.4dB, variable gain range of more than l7dB, IIP3 of - 4.8dBm at 4.9GHz, and power consumption of 12.8mW.

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  Cite this article

[IEEE Style]

H. Park, K. Yoon, I. Hwang, "Design of MMIC Variable Gain LNA Using Behavioral Model for Wireless LAN Applications," The Journal of Korean Institute of Communications and Information Sciences, vol. 29, no. 6, pp. 697-704, 2004. DOI: .

[ACM Style]

Hun Park, Kyung-Sik Yoon, and In-Gab Hwang. 2004. Design of MMIC Variable Gain LNA Using Behavioral Model for Wireless LAN Applications. The Journal of Korean Institute of Communications and Information Sciences, 29, 6, (2004), 697-704. DOI: .

[KICS Style]

Hun Park, Kyung-Sik Yoon, In-Gab Hwang, "Design of MMIC Variable Gain LNA Using Behavioral Model for Wireless LAN Applications," The Journal of Korean Institute of Communications and Information Sciences, vol. 29, no. 6, pp. 697-704, 6. 2004.

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pISSN : 1226 - 4717
eISSN : 2287 - 3880